Customized Sic Ceramics carrier End Effector for Wafer Handling

The wafer handling end effector, manufactured with ultra-precision machining technology, achieves micron-level dimensional accuracy (±0.01mm) and exceptional thermal stability (CTE ≤4.5×10⁻⁶/K). Its surface features an advanced CVD-deposited nanocrystalline SiC protective layer (purity >99.995%), delivering superior surface finish (Ra<0.05μm) and wear resistance (wear rate <0.1μm/1000 cycles), while ensuring damage-free wafer transfer at high speeds (1.5m/s) with minimal particle generation (<5 particles/ft³). Our high-purity SiC-coated end effector demonstrates outstanding performance stability across extreme temperatures (-200°C~1200°C), excellent thermal uniformity (±1°C@150mm wafer) for epitaxial growth thickness consistency (±1.5%), and remarkable chemical resistance (pH1-13), maintaining reliable operation through >100,000 cycles.

Technical specification:

Key features of End Effector for Wafer Handling

1. Nanoscale SiC Protective Layer via CVD Technology

- Deposited using hot-wall CVD reactor (1200°C) with 20-50nm grain size

- Coating density ≥3.18g/cm³, porosity <0.1%

2. Exceptional High-Temperature Stability & Thermal Uniformity

- Maintains thermal conductivity ≥120W/m·K at 1000°C

-Thermal deformation <0.02mm/100mm (ASTM E228 certified)

3. Ultra-Fine SiC Crystalline Coating for Atomic-Level Smoothness

- Diamond slurry polished to Ra<0.3nm (AFM verified)

- Surface friction coefficient μ<0.15 (vs. silicon wafer)

4. Superior Chemical Resistance & Cleaning Durability

- Etching rate <0.01μm/cycle in SC1/SC2 solutions

- Passes 2000-cycle ozone water cleaning test (80°C)

5. Proprietary Structural Design Preventing Cracking/Delamination

- Stress buffer layer design (SiC/Si gradient transition)

- Withstands 1000 thermal shock cycles (-196°C~300°C) (MIL-STD-883 compliant)

Primary applications of End Effector for Wafer Handling

1. Semiconductor Front-End Processes:

· Wafer transportation within fabs (AMHS)

· Lithography tool loading/unloading

2. Advanced Packaging:

· Precision alignment for Fan-out and 3D IC stacking

· Ultra-thin wafer handling (<100μm) for GaN/SiC compound semiconductors

3. Vacuum Environments:

· Wafer transfer in PVD/CVD chambers

Process Compatibility, Materials & Applications

Products pictures of End Effector for Wafer Handling

ZMSH is a leading provider of high-performance Silicon Carbide (SiC) wafer handling solutions, specializing in precision-engineered carrier plates and end effectors for semiconductor manufacturing. Our advanced SiC components feature ultra-pure CVD coatings with surface roughness below 0.1μm Ra, ensuring particle-free operation in Class 1 cleanroom environments. The products demonstrate exceptional thermal stability, maintaining dimensional accuracy within ±0.03mm across extreme temperature ranges from -200°C to 1300°C, with thermal expansion coefficients as low as 4.1×10⁻⁶/K.