SHANGHAI FAMOUS TRADE CO.,LTD
                                                                                                           
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Customized SiC Ceramic Boat Carrier For Wafer Handling

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Brand: zmsh
Product Description

Customized SiC Ceramic Boat Carrier for Wafer Handling

 
The Customized Silicon Carbide (SiC) Ceramic Boat Carrier is a high-performance wafer handling solution designed for semiconductor, photovoltaic, and LED manufacturing processes. Engineered for high-temperature stability, chemical resistance, and ultra-low contamination, this carrier ensures safe and efficient wafer transport in demanding environments such as CVD, diffusion furnaces, and oxidation chambers.
 

 


 
 


 

Key Advantages of SiC Ceramic Boat

 

 
High Thermal Stability – Withstands temperatures up to 1,600°Cwithout deformation.
Chemical Inertness – Resists acids, alkalis, and plasma erosion, ensuring long-term durability.
Low Particle Generation – Minimizes contamination in EUV and advanced node fabrication.
Customizable Design – Tailored for wafer size, slot pitch, and handling requirements
Ideal for semiconductor fabs, MEMS production, and compound semiconductor processing
 
 

 


 
 


 

Specification

 

 

Silicon Carbide Content-%>99.5
Average Grain Size-micron4-10
Bulk Density-kg/dm^3>3.14
Apparent Porosity-Vol %<0.5
Vickers HardnessHV0.5Kg/mm^22800
Modulus of Rupture (3 points)20°CMPa450
Compression Strength20°CMPa3900
Modulus of Elasticity20°CGPa420
Fracture Toughness-MPa/m^1/23.5
Thermal Conductivity20°CW(m*K)160
Electrical Resistivity20°COhm.cm10^6-10^8
Coefficient of Thermal Expansiona
(RT"800°C)
K^-1*10^-64.3
Max. Application TemperatureOxide Atmosphere°C1600
Max. Application TemperatureInert Atmosphere°C1950
 

 


 

 

Applications of SiC Ceramic Boat 

 

 
1. Semiconductor Manufacturing
✔ Diffusion & Annealing Furnaces
- High-Temperature Stability – Withstands 1,600°C (oxidizing) / 1,950°C (inert) without deformation.
- Low Thermal Expansion (4.3×10⁻⁶/K) – Prevents wafer warpage in rapid thermal processing (RTP).

✔ CVD & Epitaxy (SiC/GaN Growth)
- Gas Corrosion Resistance – Inert to SiH₄, NH₃, HCl, and other aggressive precursors.
- Particle-Free Surface – Polished (Ra <0.2μm) for defect-free epitaxial deposition.

✔ Ion Implantation
- Radiation-Hardened – No degradation under high-energy ion bombardment.

 
 
2. Power Electronics (SiC/GaN Devices)
✔ SiC Wafer Processing
- CTE Matching (4.3×10⁻⁶/K) – Minimizes stress in 1,500°C+ epitaxial growth.
- High Thermal Conductivity (160 W/m·K) – Ensures uniform wafer heating.

✔ GaN-on-SiC Devices
- Non-Contaminating – No metal ion release vs. graphite boats.

 
 
3. Photovoltaic (Solar Cell) Production
✔ PERC & TOPCon Solar Cells
- POCl₃ Diffusion Resistance – Withstands phosphorus doping environments.
- Long Service Life – 5-10 years vs. 1-2 years for quartz boats.

✔ Thin-Film Solar (CIGS/CdTe)
- Corrosion Resistance – Stable in H₂Se, CdS deposition processes.

 
 
4. LED & Optoelectronics
✔ Mini/Micro-LED Epitaxy
- Precision Slot Design – Holds fragile 2"–6" wafers without edge chipping.
- Cleanroom-Compatible – Meets SEMI F57 particle standards.

 
 
5. Research & Specialty Applications
✔ High-Temp Material Synthesis
- Sintering Aids (e.g., B₄C, AlN) – Chemically inert in 2,000°C+ environments.
- Crystal Growth (e.g., Al₂O₃, ZnSe) – Non-reactive with molten materials.

 


 

FAQ

 
Q1: What wafer sizes are supported?
Standard: 150mm (6"), 200mm (8"), 300mm (12"). Customization available upon request.
 
Q2: What is the lead time for customized designs?
- Standard models: 4–6 weeks.
- Fully customized: 8–12 weeks (depending on complexity).

 

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company SHANGHAI FAMOUS TRADE CO.,LTD
Location Room.1-1810,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Contact Person Wang

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