4H-N type and semi-insulating silicon carbide (SiC) substrates are high-purity single-crystal wafers manufactured using the Physical Vapor Transport (PVT) method. These substrates exhibit outstanding electrical and thermal properties, including wide bandgap characteristics, high breakdown electric field, and exceptional thermal conductivity. Ideal for epitaxial growth of SiC or III-Nitride materials, they serve as key foundational components in high-power, high-frequency, and high-temperature electronic devices.

• Excellent Electrical Properties:
  • 4H-N Type: Resistivity 0.015–0.028 Ω·cm
  • Semi-Insulating Type: Resistivity ≥10⁵ Ω·cm
• Superior Geometric Quality:
  • Total Thickness Variation (TTV) ≤ 15 µm
  • Bow ≤ 40 µm, Warp ≤ 60 µm
• Precise Orientation Control:
  • On-axis orientation: <±0.5°
  • Off-axis cut: 4°±0.5° toward [11-20] direction
• Controlled Surface Finish:
  • Standard polished surface: Ra ≤ 1 nm
  • CMP polished surface: Ra ≤ 0.5 nm

• Power Electronics: Schottky barrier diodes (SBDs), MOSFETs, IGBTs
• RF & Microwave Devices: High-frequency power amplifiers, MMICs
• Optoelectronics: GaN-based LED and laser epitaxial substrates
• High-Temperature Sensors: Automotive, aerospace, and energy sector applications

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The silicon carbide industry encompasses substrate preparation, epitaxial growth, device fabrication, and end-use applications. Using the PVT method, high-quality monocrystalline SiC substrates are produced, serving as the base for epitaxial deposition (via CVD) and subsequent device manufacturing. ZMSH supplies 100 mm and 150 mm SiC wafers that meet stringent industrial requirements for high-power and high-frequency applications.