4H-N Type SiC Substrate 10x10mm Wafer for Power Electronics
The 4H-N type SiC 10*10 mm small wafer is a high-performance semiconductor substrate based on silicon carbide (SiC), a third-generation semiconductor material. Fabricated via Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD), it is available in 4H-SiC or 6H-SiC polytypes and N-type or P-type doping configurations. With dimensional tolerances within ±0.05 mm and surface roughness Ra < 0.5 nm, each wafer is epitaxial-ready and undergoes rigorous inspection, including XRD crystallinity validation and optical microscopy defect analysis.
| Parameter | Specification |
|---|---|
| Material Type | 4H-SiC (N-type doped) |
| Dimensions | 10*10 mm (±0.05 mm) |
| Thickness | 100–500 μm |
| Surface Roughness | Ra < 0.5 nm (polished) |
| Resistivity | 0.01–0.1 Ω·cm |
| Crystal Orientation | (0001) ±0.5° |
| Thermal Conductivity | 490 W/m·K |
| Defect Density | Micropipes: <1 cm⁻²; Dislocations: <10⁴ cm⁻² |
- High Thermal Conductivity: 490 W/m·K, three times that of silicon, enabling efficient heat dissipation.
- Breakdown Strength: 2.4 MV/cm, supporting high-voltage and high-frequency operation.
- High-Temperature Stability: Operational up to 600°C with low thermal expansion (4.0*10⁻⁶/K).
- Mechanical Durability: Vickers hardness 28–32 GPa, flexural strength >400 MPa.
- Customization Support: Adjustable orientation, thickness, doping, and geometry.
- Electric vehicle power inverters (3–5% efficiency gain)
- 5G RF power amplifiers (24–39 GHz bands)
- Smart grid HVDC converters and industrial motor drives
- Aerospace sensors and satellite power systems
- UV LEDs and laser diodes
- 4H-N SiC Substrate, 5*5 mm, 350 μm (Prime/Dummy Grade)
- Custom-shaped SiC wafers with backside metallization
Q: What are typical applications of 10*10 mm SiC wafers?
A: Ideal for prototyping power devices (MOSFETs/diodes), RF components, and high-temperature optoelectronics.
Q: How does SiC compare to silicon?
A: SiC offers 10* higher breakdown voltage, 3* better thermal conductivity, and superior high-temperature performance.
- Complete production chain from cutting to final cleaning and packing.
- Capability to reclaim wafers with diameters 4-inch—12-inch.
- 20 year experience of wafering and reclaiming of monocrystalline electronic materials
ZMSH Technology can provide customers with imported and domestic high-quality conductive, 2-6inch semi-insulating and HPSI (High Purity Semi-insulating) SiC substrates in batches; In addition, it can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets, and can also be customized according to the specific needs of customers, with no minimum order quantity.
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