Ningbo Baosi Energy Equipment Co., Ltd.
                                                                                                           
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GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD

Price Negotiable
Price: USD 8500-12500/Set
MOQ: 1 Set
Delivery Time: 15-30 Working Days
Brand: Baosi
Product Description
GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free High-Speed Vacuum Pump for Semiconductor PECVD MOCVD
GRM1201 Multi-Stage Roots Dry Vacuum Pump — 1200 m³/h High-Speed Solution

The GRM1201 is a high-speed multi-stage roots dry vacuum pump delivering 1200 m³/h pumping speed with ultimate pressure of ≤0.15 Pa. Sharing the same compact platform as the GRM601 (865 * 344 * 751 mm, 260 kg) but with ISO160 inlet for higher throughput, it excels in PECVD, MOCVD and demanding semiconductor clean and medium process applications.

Key Features
  • High-Speed Multi-Stage Roots: 1200 m³/h with low power consumption
  • Dual Motor Efficiency: 1.9+1.9 kW permanent magnet synchronous motors
  • Excellent Ultimate Pressure: ≤0.15 Pa meets demanding process requirements
  • Ultra-Quiet: ≤63 dB(A) — cleanroom-compatible noise level
  • Large ISO160 Inlet: Handles high gas throughput for production-scale applications
  • Oil-Free Clean Vacuum: No oil contamination for sensitive semiconductor processes
  • Superior Dust Handling: Advanced rotor design for particle-rich environments
  • Compact Platform: Same footprint as GRM601 — easy line integration
  • Triple Sealing System: Lip seal + labyrinth + nitrogen purge guarantee oil-free vacuum
  • Smart Connectivity: I/O and RS485 (Modbus) for remote factory integration
Technical Specifications
Model GRM1201
Pumping Speed 1200 m³/h
Ultimate Pressure (w/o purge) ≤0.15 Pa
Motor Power 1.9 + 1.9 kW
Voltage 380V (3-Phase)
Inlet Connection ISO160
Outlet Connection KF25
Noise Level ≤63 dB(A)
Weight 260 kg
Dimensions (L*W*H) 865 * 344 * 751 mm
Cooling Water Pressure 0.1–0.6 MPa
Cooling Water Flow ≥4 L/min
N₂ Purge Pressure 0.2–0.6 MPa
N₂ Purge Flow 12–50 L/min
Operating Temperature 5–40°C; ≤90% RH
Applications
  • Semiconductor: PECVD, MOCVD, SACVD, RTP, HDP-CVD, ALD, Metal Etch, Silicon Etch
  • Photovoltaic: High-throughput solar cell manufacturing lines
  • Lithium Battery: Production-scale cell drying and electrolyte processing
  • Flat Panel Display: OLED and LCD manufacturing

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Ningbo Baosi Energy Equipment Co., Ltd.
Location No.55 ,Juchao Rd,Jiangkou Subdistrict,Fenghua District, Ningbo,Zhejiang,China.
Contact Person Raeka

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