GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD
Price:
USD 8500-12500/Set
MOQ:
1 Set
Delivery Time:
15-30 Working Days
Brand:
Baosi
Product Description
GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free High-Speed Vacuum Pump for Semiconductor PECVD MOCVD
GRM1201 Multi-Stage Roots Dry Vacuum Pump — 1200 m³/h High-Speed Solution
The GRM1201 is a high-speed multi-stage roots dry vacuum pump delivering 1200 m³/h pumping speed with ultimate pressure of ≤0.15 Pa. Sharing the same compact platform as the GRM601 (865 * 344 * 751 mm, 260 kg) but with ISO160 inlet for higher throughput, it excels in PECVD, MOCVD and demanding semiconductor clean and medium process applications.
Key Features
- High-Speed Multi-Stage Roots: 1200 m³/h with low power consumption
- Dual Motor Efficiency: 1.9+1.9 kW permanent magnet synchronous motors
- Excellent Ultimate Pressure: ≤0.15 Pa meets demanding process requirements
- Ultra-Quiet: ≤63 dB(A) — cleanroom-compatible noise level
- Large ISO160 Inlet: Handles high gas throughput for production-scale applications
- Oil-Free Clean Vacuum: No oil contamination for sensitive semiconductor processes
- Superior Dust Handling: Advanced rotor design for particle-rich environments
- Compact Platform: Same footprint as GRM601 — easy line integration
- Triple Sealing System: Lip seal + labyrinth + nitrogen purge guarantee oil-free vacuum
- Smart Connectivity: I/O and RS485 (Modbus) for remote factory integration
Technical Specifications
| Model | GRM1201 |
| Pumping Speed | 1200 m³/h |
| Ultimate Pressure (w/o purge) | ≤0.15 Pa |
| Motor Power | 1.9 + 1.9 kW |
| Voltage | 380V (3-Phase) |
| Inlet Connection | ISO160 |
| Outlet Connection | KF25 |
| Noise Level | ≤63 dB(A) |
| Weight | 260 kg |
| Dimensions (L*W*H) | 865 * 344 * 751 mm |
| Cooling Water Pressure | 0.1–0.6 MPa |
| Cooling Water Flow | ≥4 L/min |
| N₂ Purge Pressure | 0.2–0.6 MPa |
| N₂ Purge Flow | 12–50 L/min |
| Operating Temperature | 5–40°C; ≤90% RH |
Applications
- Semiconductor: PECVD, MOCVD, SACVD, RTP, HDP-CVD, ALD, Metal Etch, Silicon Etch
- Photovoltaic: High-throughput solar cell manufacturing lines
- Lithium Battery: Production-scale cell drying and electrolyte processing
- Flat Panel Display: OLED and LCD manufacturing
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Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Ningbo Baosi Energy Equipment Co., Ltd.
Location
No.55 ,Juchao Rd,Jiangkou Subdistrict,Fenghua District, Ningbo,Zhejiang,China.
Contact Person
Raeka