FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO-220F Original Package
FQPF2N60C FQPF2N60 2N60 MOSFET 2A 600V field effect transistor TO-220F MOS FET N-Channel transistor Original Package
- 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
- Low gate charge ( typical 9.0 nC)
- Low Crss ( typical 5.0 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capabilit
Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameters | FQPF2N60 | Unit |
| VDSS | Drain-Source Voltage | 600 | V |
| VGS | Gate-Source Voltage-Continuous | ±30 | V |
| ID | Drain Current-Continuous(Note 2) | 1.6 | A |
| IDM | Drain Current-Single Plused(Note 1) | 6.4 | A |
| PD | Power Dissipation (Note 2) | 28 | W |
| Tj | Max.Operating junction temperature | -55~150 | ℃ |
Electrical characteristics (Tc=25°C unless otherwise noted)
| Symbol | Parameters | Min | Typ | Max | Units | Conditions | ||
| Static Characteristics | ||||||||
| BVDSS | Drain-Source Breakdown | 600 | -- | -- | V | ID=250µA,VGS=0V,TJ=25°C | ||
| VGS(th) | Gate Threshold Voltage | 3.0 | -- | 5.0 | V | VDS=VGS,ID=250μA | ||
| RDS(on) | Drain-Source On-Resistance | -- | 20 | 25 | mΩ | VGS=10V,ID=25A | ||
| IGSS | Gate-Body Leakage Current | -- | -- | ±100 | nA | VGS=±20V,VDS=0 | ||
| IDSS | Zero Gate Voltage Drain Current | -- | -- | 1 | μA | VDS=60V,VGS=0 | ||
| gfs | Forward Transconductance | -- | 2.0 | -- | S | VDS=30V,ID=25A | ||
| Switching Characteristics | ||||||||
| Td(on) | Turn-On Delay Time | -- | 10 | 30 | ns | VDS=30V,ID=25A, | ||
| Tr | Rise Time | -- | 185 | -- | ns | |||
| Td(off) | Turn-Off Delay Time | -- | 20 | 50 | ns | |||
| Tf | Fall Time | -- | 25 | 60 | ns | |||
| Qg | Total Gate Charge | -- | 39 | -- | nC | VDS=48V,VGS=10V, | ||
| Qgs | Gate-Source Charge | -- | 9 | 11 | nC | |||
| Qgd | Gate-Drain Charge | -- | 4.3 | -- | nC | |||
| Dynamic Characteristics | ||||||||
| Ciss | Input Capacitance | -- | 270 | 350 | pF | VDS=25V,VGS=0, | ||
| Coss | Output Capacitance | -- | 40 | 50 | pF | |||
| Crss | Reverse Transfer Capacitance | -- | 5 | 7 | pF | |||
| IS | Continuous Drain-Source Diode | -- | -- | 1.6 | A | |||
| VSD | Diode Forward On-Voltage | -- | -- | 1.4 | V | IS=20A,VGS=0 | ||
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Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
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