High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel TO-220

Price Negotiable

Price: Negotiated

MOQ: Negotiable

Delivery Time: 3-5 days

Brand: CANYI

Product Description

High precision 3N80 3A 800V Field Effect Transistor/ Power Mosfet N-Channel TO-220

20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET

High power transistor features:

Excellent package for good heat dissipation
Ultra low gate charge
Low reverse transfer capacitance
Fast switching capability
Avalanche energy specified

General description of insulated gate bipolar transistor

The 3N80 provide excellent RDS(ON)low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.It used in power switching application.

Maximum ratings (Ta=25℃ unless otherwise noted)

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	V_DS	800	V
Gate-Source Voltage	V_GS	±30	V
Continuous Drain Current	I_D	3	A
Pulsed Drain Current	I_DM	10	A
Single Pulsed Avalanche Energy (note1)	EAS	170	mJ
Thermal Resistance from Junction to Ambient	RθJA	62.5	℃/W
Junction Temperature	T_J	150	℃
Storage Temperature Range	T_STG	-55~+150
Maximum lead temperature for soldering purposes , 1/8”from case for 5 seconds	TL	260

Electrical characteristics (Ta=25℃ unless otherwise noted)

Parameter	Symbol	Test Condition	Unit
Off Characteristics
Drain-Source Breakdown Voltage	V_{(BR) DSS}	V_GS = 0V, I_D = -250uA	V
Zero Gate Voltage Drain Current	I_DSS	V_D_S = 800V, V_GS = 0V	uA
Gate Body Leakage	I_GSS	V_GS₌±30v,V_D_S= 0V	nA
On characteristics (note 2)
Drain-Source On-State Resistance	R_DS(on)	V_GS = 10V, I_D = 1.5A	mΩ
Forward Transconductance ¹⁾	g_fs	V_D_S=1 5V,I_D= 1.5A	S
Gate Threshold Voltage	V_GS(th)	V_D_S = V_GS ,I_D = 250uA	v
Switching Characteristics (note 2,3)
Turn-On Delay Time	t_d(on)	V_DD = 400V, V_DS=10V R_G=4.7Ω,R_G = 3A	ns
Turn-On Rise Time	t_r
Turn-Off Delay Time	t_d(off)
Turn-Off Fall Time	t_f
Total Gate Charge	Qg	VDS =640V,VGS =10V,ID =3A	nC
Gate-Source Charge	Qgs		nC
Gate-Drain Charge	Qgd		nC
Dynamic Characteristics (note 3)
Input Capacitance	C_iss	V_DS = 25V, V_GS = 0V f = 1 MHz	pF
Output Capacitance	C_oss
Reverse Transfer Capacitance	C_rss
Drain-source diode characteristics and maximum ratings
Drain-source diode forward voltage	VSD	VGS = 0V, IS =3A	V
Continuous drain-source diode forward current	IS		A
Pulsed drain-source diode forward current	ISM		A

Notes :

1. IL=3A, VDD=50V, RG=25Ω,Starting TJ=25℃.

2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

3. Guaranteed by design, not subject to production </

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Supplying to Changdian, Xinghai, Tuofeng, Leshan, Roma and Anshi
Competitive price and save your time
Over 10 years work experience technical service team
Mix order accepted and free sample

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