G-Resource Electronics Co.,Ltd
                                                                                                           
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17 Years
Since 2009
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SMA Super Fast Recovery Diode ES1A ES1B ES1C ES1D ES1E ES1G ES1J Long Lifespan

Price Negotiable
Price: negotiable
MOQ: 100PCS
Delivery Time: 1-2 WORK DAYS
Brand: THINKCHIP
Product Description
 

ES1A ES1B ES1C ES1D ES1E ES1G ES1JFast Recorvery Diode Fast Switching Diode DO-214AC SMA

 

Type Package VRRM(V) IO(A) IFSM(A) Trr(ns) VF(V) IR(uA)
ES1A SMA 50 1 30 35 0.95 5
ES1B SMA 100 1 30 35 0.95 5
ES1C SMA 150 1 30 35 0.95 5
ES1D SMA 200 1 30 35 0.95 5
ES1E SMA 300 1 30 35 1.25 5
ES1G SMA 400 1 30 35 1.25 5
ES1J SMA 600 1 30 35 1.7 5

 

other items 

ES1A SMA 50 1 30 35 0.95 5
ES1ABF SMBF 100 3 35 35 1 5
ES1AF SMAF 50 1 30 35 1 5
ES1AL SOD-123FL 50 1 30 35 1 5
ES1B SMA 100 1 30 35 0.95 5
ES1BBF SMBF 50 3 35 35 1 5
ES1BF SMAF 100 1 30 35 1 5
ES1BL SOD-123FL 100 1 30 35 1 5
ES1C SMA 150 1 30 35 0.95 5
ES1CBF SMBF 150 3 35 35 1 5
ES1CF SMAF 150 1 30 35 1 5
ES1CL SOD-123FL 150 1 30 35 1 5
ES1D SMA 200 1 30 35 0.95 5
ES1DBF SMBF 200 3 35 35 1 5
ES1DF SMAF 200 1 30 35 1 5
ES1DL SOD-123FL 200 1 30 35 1 5
ES1E SMA 300 1 30 35 1.25 5
ES1EBF SMBF 300 3 35 35 1.25 5
ES1EF SMAF 300 1 30 35 1.25 5
ES1EL SOD-123FL 300 1 30 35 1.25 5
ES1G SMA 400 1 30 35 1.25 5
ES1GBF SMBF 400 3 35 35 1.25 5
ES1GF SMAF 400 1 30 35 1.25 5
ES1GL SOD-123FL 400 1 30 35 1.25 5
ES1J SMA 600 1 30 35 1.7 5
ES1JBF SMBF 600 3 35 35 1.68 5
ES1JF SMAF 600 1 30 35 1.65 5
ES1JL SOD-123FL 600 1 30 35 1.68 5


 

Fast recovery diode (FRD) is a kind of semiconductor diode with good switching characteristics and short reverse recovery time, which is mainly used in switching power supply, PWM pulse width modulator, inverter and other electronic circuits, as a high frequency rectifier diode, secondary diode or damping diode. The internal structure of fast recovery diode is different from ordinary p-junction diode. It belongs to PIN junction diode, that is, base region I is added between p-type silicon material and n-type silicon material to form PIN silicon chip. Because the base area is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage value) is high.

 

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.

 

 

 

 

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Company G-Resource Electronics Co.,Ltd
Location #17J, C Block, Huaqiang Plaza, Futian, Shenzhen 518033
Contact Person Jenny chan

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