W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
Ultra high purity tungsten alloy W-Ti sputtering target Plate Planar Billet for Semiconductor Physical Vapor Deposition
Tungsten-titanium (WTi) films are known to act as the effective diffusion barrier between Al and Si in semiconductor and photovoltaic cells industry. WTifilms are typically deposited as thin films by physical vapor deposition (PVD) through sputtering of a WTialloy target. It is desirable to produce a target that will provide film uniformity,minimum particle generation during sputtering, and desired electrical properties. In order to meet the reliability requirements for diffusion barriers of complex integrated circuits, the WTialloy target must have high purity and high density.
| Type |
W (wt.%) |
Ti (wt.%) |
Purity (wt.%) |
Relative Density (%) |
Grain Size (µm) | Dimension (mm) |
Ra (µm) |
| WTi-10 | 90 | 10 | 99.9-99.995 | ≥99 | ≤20 | ≤Ø452 | ≤1.6 |
| WTi-20 | 80 | 20 | 99.9-99.99 | ≥99 | ≤20 | ≤Ø452 | ≤1.6 |
| WTi | 70-90 | 10-30 | 99.9-99.995 | ≥99 | ≤20 | ≤Ø452 |
≤1.6 |
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