JUYI JY4N8M N Channel Enhancement Mode Power Mosfet For Power Switching

JY4N8M

N Channel Enhancement Mode Power MOSFET

General Description

The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. .

Features

● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

Applications

● Hard switched and high frequency circuits
● Power Management for Inverter Systems

PIN Description

TO525 Package Outline

Pictures