Sapphire Windows Piezoelectric Wafer Semiconductor Scratching Resistant
Semiconductor Sapphire Wafer Sapphire Windows Piezoelectric Wafer
Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
|
Item |
3-inch C-plane(0001) 500μm Sapphire Wafers |
|
|
Crystal Materials |
99,999%, High Purity, Monocrystalline Al2O3 |
|
|
Grade |
Prime, Epi-Ready |
|
|
Surface Orientation |
C-plane(0001) |
|
|
C-plane off-angle toward M-axis 0.2 +/- 0.1° |
||
|
Diameter |
76.2 mm +/- 0.1 mm |
|
|
Thickness |
500 μm +/- 25 μm |
|
|
Primary Flat Orientation |
A-plane(11-20) +/- 0.2° |
|
|
Primary Flat Length |
22.0 mm +/- 1.0 mm |
|
|
Single Side Polished |
Front Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
(SSP) |
Back Surface |
Fine ground, Ra = 0.8 μm to 1.2 μm |
|
Double Side Polished |
Front Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
(DSP) |
Back Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
TTV |
< 15 μm |
|
|
BOW |
< 15 μm |
|
|
WARP |
< 15 μm |
|
|
Cleaning / Packaging |
Class 100 cleanroom cleaning and vacuum packaging, |
|
|
25 pieces in one cassette packaging or single piece packaging. |
||
|
Item |
4-inch C-plane(0001) 650μm Sapphire Wafers |
|
|
Crystal Materials |
99,999%, High Purity, Monocrystalline Al2O3 |
|
|
Grade |
Prime, Epi-Ready |
|
|
Surface Orientation |
C-plane(0001) |
|
|
C-plane off-angle toward M-axis 0.2 +/- 0.1° |
||
|
Diameter |
100.0 mm +/- 0.1 mm |
|
|
Thickness |
650 μm +/- 25 μm |
|
|
Primary Flat Orientation |
A-plane(11-20) +/- 0.2° |
|
|
Primary Flat Length |
30.0 mm +/- 1.0 mm |
|
|
Single Side Polished |
Front Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
(SSP) |
Back Surface |
Fine ground, Ra = 0.8 μm to 1.2 μm |
|
Double Side Polished |
Front Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
(DSP) |
Back Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
TTV |
< 20 μm |
|
|
BOW |
< 20 μm |
|
|
WARP |
< 20 μm |
|
|
Cleaning / Packaging |
Class 100 cleanroom cleaning and vacuum packaging, |
|
|
25 pieces in one cassette packaging or single piece packaging. |
||
|
Item |
6-inch C-plane(0001) 1300μm Sapphire Wafers |
|
|
Crystal Materials |
99,999%, High Purity, Monocrystalline Al2O3 |
|
|
Grade |
Prime, Epi-Ready |
|
|
Surface Orientation |
C-plane(0001) |
|
|
C-plane off-angle toward M-axis 0.2 +/- 0.1° |
||
|
Diameter |
150.0 mm +/- 0.2 mm |
|
|
Thickness |
1300 μm +/- 25 μm |
|
|
Primary Flat Orientation |
A-plane(11-20) +/- 0.2° |
|
|
Primary Flat Length |
47.0 mm +/- 1.0 mm |
|
|
Single Side Polished |
Front Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
(SSP) |
Back Surface |
Fine ground, Ra = 0.8 μm to 1.2 μm |
|
Double Side Polished |
Front Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
(DSP) |
Back Surface |
Epi-polished, Ra < 0.2 nm (by AFM) |
|
TTV |
< 25 μm |
|
|
BOW |
< 25 μm |
|
|
WARP |
< 25 μm |
|
|
Cleaning / Packaging |
Class 100 cleanroom cleaning and vacuum packaging, |
|
|
25 pieces in one cassette packaging or single piece packaging. |
||
Acceptance Check
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.