High Infrared Transmittance GaAs Substrate Single Crystal Substrate
High infrared transmittance GaAs Substrate Single crystal Substrate
Gallium Arsenide (GaAs) is an important and mature group III-Ⅴ compound semiconductor, it's widely used in the field of optoelectronics and microelectronics. GaAs is mainly divided into two categories: semi-insulating GaAs and N-type GaAs. The semi-insulating GaAs is mainly used to make integrated circuits with MESFET, HEMT and HBT structures, which are used in radar, microwave and millimeter wave communications, ultra-high-speed computers and optical fiber communications. The N-type GaAs is mainly used in LD, LED, near infrared lasers, quantum well high-power lasers and high-efficiency solar cells.
Properties:
| Crystal | Doped | Conduction Type | Concentration of Flows cm-3 | Density cm-2 | Growth Method Max Size |
| GaAs | None | Si | / | <5×105 | LEC HB Dia3″ |
| Si | N | >5×1017 | |||
| Cr | Si | / | |||
| Fe | N | ~2×1018 | |||
| Zn | P | >5×1017 |
Advantage:
1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance
Product shots:
FAQ:
1.Q: Are you a factory manufacturer?
A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.
2.Q:Where is your main market?
A:Europe, America, Asia.
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