S12060-02 Silicon Avalanche Photodiode Sensor - 800 nm Wavelength, 200V Breakdown Voltage, 1000 MHz Frequency
Price:
Negotiable
MOQ:
1
Delivery Time:
5-8workingdays
Brand:
Hamamatsu
Product Description
S12060-02 Silicon Avalanche Photodiode Sensor
Product Overview
The S12060-02 is a low temperature coefficient type silicon avalanche photodiode (APD) optimized for 800 nm wavelength applications. This high-performance sensor delivers exceptional sensitivity and speed for demanding optical measurement systems.
Key Features
- Low temperature coefficient of breakdown voltage: 0.4 V/°C
- High-speed response with 1000 MHz cutoff frequency
- High sensitivity and low noise operation
- Optimized for 800 nm wavelength band
Applications
- Optical rangefinders and distance measurement systems
- Free-space optical communications (FSO)
- Optical fiber communications and networking
Technical Specifications
| Parameter | Value |
|---|---|
| Maximum sensitivity wavelength (typical) | 800 nm |
| Sensitivity wavelength range | 400 to 1000 nm |
| Photosensitivity (Typical) | 0.5 A/W |
| Dark current (maximum) | 0.5 nA |
| Cutoff Frequency (Typical) | 1000 MHz |
| Junction capacitance (typical) | 1.5 pF |
| Breakdown voltage (typical) | 200 V |
| Temperature coefficient of breakdown voltage (typ.) | 0.4 V/°C |
| Gain ratio (typical value) | 100 |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu