Infrared Photoelectric Sensor

High-performance silicon PIN photodiode series featuring 960nm maximum sensitivity wavelength, 320-1100nm spectral range, and 0.52 A/W photosensitivity. Ideal for NDIR gas analysis, flame detection, POS scanners, and industrial automation. Delivers high reliability, low dark current, and excellent linearity for precision applications.

High-performance silicon photodiode sensor with 30V reverse voltage, 320-1100nm spectral range, and 960nm peak sensitivity. Features ultra-low 5pA dark current, fast 1.8μs response time, and 0.6A/W sensitivity for reliable photometry and optical measurement applications.

High-performance silicon avalanche photodiode optimized for 600nm wavelength applications. Features 0.42 A/W sensitivity, 5 nA dark current, and 900 MHz cutoff frequency. Ideal for UV to visible light detection with low noise and high gain characteristics. Industrial-grade component with reliable performance specifications.

Industrial-grade infrared photoelectric sensor with 2.2x2.2mm² active area and NDIR technology. Features 0.65W power consumption, 141mA operation current, 15ms response time, and 40±20Ω thermal resistance. Ideal for automotive, industrial automation, and security applications with 4-meter sensing distance and relay output.

Professional R9533 UVtron flame discharge sensor for public fire detection applications. Features high sensitivity (10,000 min⁻¹), wide field of view, and extended 10,000-hour lifespan. Operates in extreme temperatures from -20°C to +125°C with low background noise for reliable performance in safety-critical environments.

High-performance silicon photodiode featuring 75% UV quantum efficiency at 200 nm, infrared suppression, and ultra-low 50 pA dark current. Ideal for precision photometric applications with 7 μs rise time and 3000 pF junction capacitance. Professional-grade sensor for industrial and scientific light detection systems.

High-performance Hamamatsu silicon PIN photodiode featuring 2.8mm sensitive zone, 0.01nA dark current, and 320-730nm spectral range. Ceramic pre-molded package ensures thermal stability with 2.5μs response time and 700pF capacitance. Ideal for precision optical detection applications requiring reliable performance.

High-performance InGaAs PIN photodiode featuring low polarization-dependent loss, 1.1 A/W sensitivity at 1.55μm, and minimal 5 nA dark current. Ideal for precision optical detection with 35 MHz bandwidth and 2×10⁻¹⁴ W/√Hz noise equivalent power. Large φ1 mm photosensitive area ensures reliable performance in demanding applications.

High-performance infrared photoelectric sensor featuring integrated 1 GΩ resistor and 5 pF capacitor in compact TO-8 package. Delivers precision measurement from 190-1100 nm spectrum with ultra-low 15×10⁻¹⁵ W/Hz¹/² noise equivalent power. Ideal for analytical instruments requiring sensitive weak light detection with EMC noise resistance.

High-performance silicon photodiode featuring exceptional UV resistance with 800nm peak sensitivity and 0.38A/W responsivity. Non-resin structure and sealed UV glass window ensure reliable monitoring of strong UV light sources. Ideal for industrial UV monitoring with 100μs rise time and 5000pA dark current specifications.

S12023-02 Avalanche Photodiode APD Sensor for Optical Communication Industry Analytical Instruments Product Features: High-performance silicon avalanche photodiode (Si APD) with high near-infrared sensitivity. Low operating bias voltage (≤200V), easy circuit design and safe operation. Excellent photoelectric conversion efficiency, high gain and low noise characteristics. High-speed response speed, suitable for high-frequency optical signal detection. Stable temperature

S12023-02 Low Bias Operation Infrared Si APD High Speed Response Low bias operation, for 800 nm band This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders. Features - Stable operation at low bias - High-speed response - High sensitivity and low noise Specification: Spectral response range 400 to 1000 nm Photosensitivity (typ.) 0.5 A/W Dark current

Product Description: S1227-16BQ Special-Purpose Silicon Photodiode for Visible Light (With Quartz Window Version) Features: Receiving surface 5.9 × 1.1mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.36A /W Dark current (Max.) 5 pA Rise time (typical value) 0.5μs Junction capacitance (typical) 170 pF

G12180-003A InGaAs PIN photodiode Low And Low Dark Current Noise Non Cooled Features: *Low noise, low dark current *Low terminal capacitance *Large photosensitive area *Various photosensitive area sizes available Applications * Laser monitors *Optical power meters * Laser diode life test *NIR (near infrared) photometry *0ptical communications Specification: Dimensional Outline Window Material Borosilicate glass Package TO-18 Cooling Non-cooled Photosensitive area 0.3mm

G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems 1. Application Areas: Laser Monitoring Systems: Enables real-time detection and monitoring of laser output intensity in industrial laser processing, medical laser equipment, and research-grade laser setups, ensuring stable laser performance. Optical Power Meters: Serves as a core sensing component in optical power measurement devices, accurately capturing near-infrared (NIR) optical

Product Description: YJJ S5981 Silicon PIN Photodiode, 10×10mm, for near-infrared detection Features: S5981 Silicon PIN Photodiode, specially designed for surface mount (SMD) applications, is primarily used for precise optical scenarios such as optical axis calibration, position detection, and laser alignment. S5981 Photodiode 1. Key Parameters (Ta = 25°C) Model: S5981 Type: 4-Quadrant Silicon PIN Photodiode Photo-sensitive Area: 10 × 10 mm (Equal in all quadrants, 5 × 5 mm

Product Description: YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared Features: Sensitive area: φ1mm Product characteristics Low noise Low junction capacitance Low dark current Sensitive area: φ1mm Detailed parameter The sensitive area is φ1mm The number of pixels is 1 Encapsulation Metal Encapsulation type: TO-18 Cooling mode Non-cooled Spectral response range is 0.9 to 1.7 μm The peak sensitivity wavelength (typical

High-precision S9706 digital RGB color sensor with 12-bit output and 3.3V low voltage operation. Simultaneously measures red (615nm), green (530nm), and blue (460nm) colors with two-stage sensitivity adjustment. Features CMOS monolithic IC design, no external components required, and operates across -25°C to +85°C temperature range.

G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection Features: InGaAs PIN photodiode for long near-infrared detection Wide spectral response: 0.9 µm to 2.6 µm High sensitivity at peak wavelength of 2.3 µm High responsivity: 1.0 to 1.3 A/W Small active area: φ0.3 mm Low dark current for improved signal-to-noise ratio Compact TO-18 metal package Good response speed and low noise Operating temperature:

S5981 4 Segment Surface Mount Silicon PIN Photodiode for Industrial Processing and Precision Machinery Applications: Laser optical axis alignment for industrial processing and precision machinery. Level meters in liquid/gas tanks for continuous level monitoring. Pointing devices and optical encoders for motion tracking and position control. Optical pickup systems for CD/DVD drives and barcode scanners. Key Features: 4 Segment Array: Independent channels for position sensing