S16765-01MS Silicon Photodiode 2.8mm Diameter with 0.01nA Dark Current in Ceramic Package
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Brand:
Hamamatsu
Product Description
S16765-01MS Silicon Photodiode with Low Dark Current
High-performance silicon PIN photodiode in pre-molded ceramic package, designed for precision optical detection applications requiring minimal dark current and reliable operation.
Key Features
- Hamamatsu silicon photodiode with high reliability
- Low dark current of 0.01 nA for precise measurements
- 2.8 mm sensitive zone diameter for optimal light capture
- Wide spectral range from 320 nm to 730 nm
- Peak sensitivity at 560 nm wavelength
- Ceramic encapsulation for thermal stability
- Fast response time of 2.5 μs
Technical Specifications
| Parameter | Value |
|---|---|
| Sensitive Zone Diameter | 2.8 mm |
| Spectral Range | 320-730 nm |
| Peak Wavelength | 560 nm |
| Peak Sensitivity | 0.3 A/W |
| Maximum Dark Current | 0.01 nA |
| Shunt Resistance | 100 GΩ |
| Response Time | 2.5 μs |
| Capacitance | 700 pF |
| Reverse Voltage | 3V |
| Welding Temperature | 260℃ |
| Light Source Power Range | 0.1 μW - 100 mW/cm² |
Application Range
This photodiode covers detection applications from X-rays to ultraviolet, visible light, near infrared, and up to 3000 nm in the middle infrared band. Suitable for various semiconductor laser diode applications at chip level, component level, and module level configurations.
Professional distribution of Hamamatsu optoelectronic devices including optical reception components, silicon photodiodes, and photoelectric detection devices.
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu