S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band
Price:
Negotiable
MOQ:
Standard
Delivery Time:
3-5Workingdays
Brand:
Hamamatsu
Product Description
S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band
This is an 800nm band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).
Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise
| Sensitivity (typical) | 0.5 A/W |
| Dark current (maximum) | 2 nA |
| Cut-off frequency (typical) | 600 MHz |
| Terminal capacitance (typical) | 6 pF |
| Breakdown voltage (typical) | 200 V |
| Breakdown voltage temperature coefficient (typical) | 0.4 V/°C |
| Gain (typical) | 100 |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu