YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode
Product Description:
G12180-010A Indium Gallium Arsenic PIN Photodiode
Features:
peculiarity
- Low noise, low dark current
- Low junction capacitance
- Receiving surface: φ1mm
- Low noise
Receiving surface φ1.0mm
Number of pixels 1
Encapsulation metal
Package category TO-18
Heat dissipation uncooled type
Sensitivity wavelength range 0.9 to 1.7 μm
Maximum sensitivity wavelength (typical value) 1.55 μm
Photosensitivity (typical value) 1.1 A/W
Dark current (Max.) 4 nA
Cut-off frequency (typical value) 60 MHz
Junction capacitance (typical) 55 pF
Noise equivalent power (typical value) 1.4×10-14 W/Hz1/2
Typical value of measurement conditions Tc = 25°C, unless otherwise stated, sensitivity: λ = λp, dark current: VR = 5V, cutoff frequency: VR = 5V, RL = 50Ω, -3 dB, junction capacitance: VR = 5V, f = 1MHz
Specifications:
| Coolin | Uncooled |
| Spectral response range | 0.9 to 1.7 μm |
| Peak wavelength (typical value) | 1.55 μm |
| Light sensitivity (typical value) | 0.9A /W |
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