YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band
Product Description:
S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band
Features:
Silicon photodiode molded into a transparent plastic package
peculiarity
- Visible to near infrared band (suppressed infrared sensitivity type)
Detailed parameter
Receiving surface 2.4 × 2.8 mm
Encapsulation plastic
Package category --
Heat dissipation uncooled type
Reverse voltage (Max.) 10 V
Sensitivity wavelength range 320 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.48 A/W
Dark current (Max.) 20 pA
Rise time (typical value) 0.5μs
Junction capacitance (typical value) 200 pF
Typical values of measurement conditions Ta=25°C, photosensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Spectral sensitivity characteristic
Specifications:
| Photosensitivity (typical value) | 0.48 A/W |
| Dark current (Max.) | 20 pA |
| Rise time (typical value) | 0.5μs |
| Junction capacitance (typical value) | 200 pF |
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