Precision Photometric Determination of Low Capacitance Silicon Photodiode in UV to NIR Bands YJJ S1336-8BQ TO-5 Package
Product Description:
S1336-8BQ Is Suitable For Precision Photometric Determination Of Silicon Photodiode Low Capacitance In Ultraviolet To Near-Infrared Bands
Features:
Suitable for precise photometry in ultraviolet to near-infrared bands
peculiarity
- High sensitivity in UV band
- Low capacitance
- High reliability
Receiving surface 5.8× 5.8mm
Encapsulation metal
Package category TO-8
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 20 pA
Rise time (typical value) 0.1μs
Junction capacitance (typical) 20 pF
Noise equivalent power (typical value) 5.7×10-15 W/Hz1/2
Measurement conditions Typical value Ta = 25°C, unless otherwise stated,
Sensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz
Specifications:
| Spectral response range | 190 to 1100 nm |
| Maximum sensitivity wavelength (typical value) | 960 nm |
| Photosensitivity (typical value) | 0.5A /W |
| Dark current (Max.) | 20 pA |
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