Silicon Photodiodes S1226-18BK S1226-18BQ Suppression Of NIR Sensitivity
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Product Description
Silicon Pin photodiodes S1226-18BK
It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses near-infrared sensitivity
Features
- High UV sensitivity: QE = 75 % (λ = 200 nm)
- Suppression of NIR sensitivity
- Low dark current
- High reliability
| Maximum Sensitivity Wavelength (Typical) | 720 nm |
| Light sensitivity (typical) | 0.36 A/W |
| Dark current (max) | 2pA |
| Rise Time (Typical) | 0.15 μs |
| Junction Capacitance (typical) | 35 pF |
| Noise equivalent power (typical) | 1.6×10-15 W/Hz1/2 |
Silicon Pin photodiodes S1226-18BQ
It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses near-infrared sensitivity
Features
- High UV sensitivity: QE = 75 % (λ = 200 nm)
- Suppression of NIR sensitivity
- Low dark current
- High reliability
| Light-receiving side | 1.1 × 1.1 mm |
| encapsulation | metal |
| Package Category | TO-18 |
| Reverse voltage (max) | 5 V |
| Spectral response range | 190 to 1000 nm |
| Light sensitivity (typical) | 0.36 A/W |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu