Silicon Photodiodes S1337-1010BR S1337-1010BQ Low Capacitance
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Product Description
Silicon photodiodes S1337-1010BQ
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance
| Maximum Sensitivity Wavelength (Typical) | 960 nm |
| Light sensitivity (typical) | 0.5 A/W |
| Rise Time (Typical) | 3 μs |
| Junction Capacitance (typical) | 1100 pF |
| Noise equivalent power (typical) | 1.8×10-14 W/Hz1/2 |
Silicon photodiodes S1337-1010BR
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- Low capacitance
| Light-receiving side | 10 × 10 mm |
| encapsulation | ceramics |
| Spectral response range | 340 to 1100 nm |
| Maximum Sensitivity Wavelength (Typical) | 960 nm |
| Light sensitivity (typical) | 0.62 A/W |
| Dark current (max) | 200 pA |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu