G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems
Price:
Negotiable
MOQ:
1PCS
Delivery Time:
5-8 work days
Product Description
G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems
1. Application Areas:
- Laser Monitoring Systems: Enables real-time detection and monitoring of laser output intensity in industrial laser processing, medical laser equipment, and research-grade laser setups, ensuring stable laser performance.
- Optical Power Meters: Serves as a core sensing component in optical power measurement devices, accurately capturing near-infrared (NIR) optical power signals for applications like fiber optic testing and laboratory photometry.
- Laser Diode Life-Cycle Testing: Withstands long-term operation and maintains consistent responsiveness, making it suitable for evaluating the durability and performance degradation of laser diodes over their service life.
- Near-Infrared (NIR) Photometry: Facilitates precise measurement of NIR light absorption, transmission, or reflection in fields such as biochemical analysis, material science, and environmental monitoring.
- Optical Communication Systems: Detects high-speed NIR optical signals (e.g., in 1.3 μm or 1.55 μm wavelength bands) for use in fiber optic communication transceivers, ensuring reliable data transmission in telecom networks.
2. Key Features:
- Broad NIR Spectral Response: Operates across a wavelength range of 0.9–1.7 μm, covering critical bands for optical communications, laser applications, and NIR photometry.
- High Sensitivity: Delivers a typical photosensitivity of 1.1 A/W (at peak wavelength ~1.55 μm), enabling accurate detection of low-intensity NIR optical signals.
- Low Dark Current: Features a maximum dark current of 0.5 nA (under reverse voltage VR = 5V), minimizing background noise and improving signal-to-noise ratio (SNR) for precise measurements.
- High-Speed Performance: Boasts a typical cut-off frequency of 600 MHz, supporting high-speed signal detection for applications like fast optical communication or laser pulse monitoring.
- Compact & Robust Package: Housed in a TO-18 package (a standard, compact metal package), ensuring mechanical stability, easy integration into circuit designs, and compatibility with standard optical mounting setups.
- Wide Operating Temperature Range: Functions reliably in temperatures from -40°C to 100°C, making it suitable for harsh industrial environments or outdoor applications.
- Low Junction Capacitance: Has a typical junction capacitance of 5 pF (VR = 5V), reducing signal distortion and enhancing high-frequency performance.
| Sensor Type | InGaAs PIN Photodiode | - |
| Package Type | TO-18 | - |
| Operation Mode | Photoconductive | - |
| Photosensitive Area Diameter | φ0.3 mm | - |
| Number of Elements | 1 | - |
| Cooling Method | Non-cooled | - |
| Spectral Response Range | 0.9 – 1.7 μm | - |
| Peak Sensitivity Wavelength | ~1.55 μm | - |
| Photosensitivity | Typ. 1.1 A/W | λ = 1.55 μm, Vₐ = 5V |
| Dark Current | Max. 0.5 nA | Vᵣ = 5V, Tₐ = 25℃, No light |
| Cut-off Frequency (-3dB) | Typ. 600 MHz | Vᵣ = 5V, Rₗ = 50Ω, λ = 1.3 μm |
| Junction Capacitance | Typ. 5 pF | Vᵣ = 5V, f = 1 MHz |
| Noise Equivalent Power (NEP) | Typ. 4.2×10⁻¹⁵ W/Hz¹/² | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
| Detectivity (D*) | Typ. 6.3×10¹² cm·Hz¹/²/W | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
| Shunt Resistance | 200 – 1000 MΩ | Vᵣ = 0V, Tₐ = 25℃, No light |
| Maximum Reverse Voltage (Vᵣₘₐₓ) | 20 V | Tₐ = 25℃ |
| Window Material | Borosilicate Glass | - |
| Operating Temperature Range | -40℃ – 100℃ | - |
| Storage Temperature Range | -55℃ – 125℃ | - |
| Temperature Coefficient of Sensitivity | 1.09 times/℃ |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu
