YJJ S12023-02 Near-Infrared Type Silicon Photodiode For Optical Distance Measuring Instrument
Product Description:
YJJ S12023-02 Near-Infrared Type Silicon Photodiode For Optical Distance Measuring Instrument
Features:
Low bias voltage, suitable for 800 nm band
This is an 800nm near-infrared silicon APD that can operate at low bias voltage of 200V or less.Suitable for FSO (Free Space Optics) and optical rangefinder applications.
Product features
Stable operation under low bias voltage
High speed response
High sensitivity and low noise
Detailed parameters
Type Near infrared (Low bias operation)
Photosensitive a
Encapsulated Metal
The encapsulation type is TO-18
Peak sensitivity wavelength (typical value) 800 nm
The spectral response range is 400 to 1000 nm
Sensitivity (typical value) 0.5a /W
Dark current (Max.) 0.5Na
Cutoff frequency (typical value) 1000 MHz
Junction capacitance (typical) 1 pF
Breakdown voltage (typical value) 150 V
Breakdown voltage temperature coefficient (typical value) 0.65 V/℃
Gain (typical value) 100
Ta=25 ℃, unless noted, Photosensitivity: λ=800 nm, M=1
Specifications:
| Photosensitive area | 0.2mm |
| encapsulation type is | TO-18 |
| Peak sensitivity wavelength (typical value) | 800 nm |
| spectral response range is | 400 to 1000 nm |
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