G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection
G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection
Features:
InGaAs PIN photodiode for long near-infrared detection
Wide spectral response: 0.9 µm to 2.6 µm
High sensitivity at peak wavelength of 2.3 µm
High responsivity: 1.0 to 1.3 A/W
Small active area: φ0.3 mm
Low dark current for improved signal-to-noise ratio
Compact TO-18 metal package
Good response speed and low noise
Operating temperature: -40°C to +85°C
RoHS compliant
Suitable for non-cooled operation
Applications :
Optical power meters
Gas analyzers
Moisture meters
NIR (near-infrared) photometry & spectroscopy
Industrial process monitoring
Environmental analysis
Optical communication testing
|
Parameter |
Min |
Typ |
Max |
Unit |
Test Condition |
|---|---|---|---|---|---|
| Spectral Response Range | 0.9 | - | 2.6 | μm | Ta=25°C |
| Peak Sensitivity Wavelength | - | 2.3 | - | μm | Ta=25°C |
| Photosensitivity (Responsivity) | 1.0 | 1.3 | - | A/W | At λ=2.3 μm, Ta=25°C |
| Dark Current | - | 0.4 | 4 | μA | Vr=0.5 V, Ta=25°C |
| Dark Current Temp. Coefficient | - | 1.035 | - | times/°C | Vr=0.5 V |
| Cut off Frequency | - | 50 | - | MHz | Ta=25°C |
| Terminal Capacitance | - | 50 | 100 | pF | Vr=0 V, f=10 kHz |
| Reverse Voltage (Max.) | - | - | 1 | V | Ta=25°C |
| Shunt Resistance | 20 | - | 100 | kΩ | Ta=25°C |
| Operating Temperature Range | -40 | - | +85 | °C | Full specification |
| Storage Temperature Range | -55 | - | +125 | °C | - |
| Photosensitive Area | - | φ0.3 | - | mm | - |
| Number of Elements | - | 1 | - | - | - |
| Soldering Temperature | - | - | 260 | °C | ≤10s duration |
| Window Material | - | Borosilicate Glass | - | - | - |
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