S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5Workingdays
Brand:
Hamamatsu
Product Description
S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation
This silicon avalanche photodiode (Si APD) is designed for the near-infrared range (800 nm band) and operates at low voltages of 200 V or less. It is suitable for applications such as optical rangefinders and free-space optical communication.
Features:
・Stable operation at low bias voltage
・Fast response speed
・High sensitivity and low noise
Specification:
|
Wavelength of peak sensitivity (typical)
|
800 nm |
| Wavelength range of sensitivity | 400–1000 nm |
| Photosensitivity (typical) | 0.5 A/W |
| Maximum dark current | 0.5 nA |
| Cut-off frequency (typical) | 1000 MHz |
| Typical terminal capacitance | 1 pF |
| Breakdown voltage (typical) | 150 V |
| Breakdown voltage temperature coefficient (typical) | 0.65 V/°C |
| Multiplication factor (typical) | 100 |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu