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S1227-1010BQ Silicon Photodiode Sensor with 190-1000 nm Range, 0.36 A/W Sensitivity for UV to Visible Light Detection

Price Negotiable
Price: Negotiable
MOQ: 1
Delivery Time: 3-5workingdays
Brand: Hamamatsu
Product Description
S1227-1010BQ Silicon Photodiode Photoelectric Infrared Sensor
Product Overview

High-performance silicon photodiode sensor designed for precision photometric applications across ultraviolet to visible light spectrum with infrared suppression capabilities.

Key Features
  • Suitable for ultraviolet to visible light detection (190-1000 nm range)
  • High UV sensitivity with quartz window: 75% quantum efficiency at 200 nm
  • Advanced infrared band sensitivity suppression
  • Ultra-low dark current for enhanced signal clarity
Technical Specifications
Parameter Value
Spectral Response Range 190 to 1000 nm
Peak Sensitivity Wavelength 720 nm (typical)
Sensitivity 0.36 A/W (typical)
Dark Current (Maximum) 50 pA
Rise Time 7 μs (typical)
Junction Capacitance 3000 pF (typical)
Spectral Response Characteristics
S1227-1010BQ Silicon Photodiode spectral response curve showing sensitivity across 190-1000 nm range
Detailed spectral response characteristics and performance data for S1227-1010BQ photodiode

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Company ShenzhenYijiajie Electronic Co., Ltd.
Location Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person Xu

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