S1227-1010BQ Silicon Photodiode Sensor with 190-1000 nm Range, 0.36 A/W Sensitivity for UV to Visible Light Detection
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5workingdays
Brand:
Hamamatsu
Product Description
S1227-1010BQ Silicon Photodiode Photoelectric Infrared Sensor
Product Overview
High-performance silicon photodiode sensor designed for precision photometric applications across ultraviolet to visible light spectrum with infrared suppression capabilities.
Key Features
- Suitable for ultraviolet to visible light detection (190-1000 nm range)
- High UV sensitivity with quartz window: 75% quantum efficiency at 200 nm
- Advanced infrared band sensitivity suppression
- Ultra-low dark current for enhanced signal clarity
Technical Specifications
| Parameter | Value |
|---|---|
| Spectral Response Range | 190 to 1000 nm |
| Peak Sensitivity Wavelength | 720 nm (typical) |
| Sensitivity | 0.36 A/W (typical) |
| Dark Current (Maximum) | 50 pA |
| Rise Time | 7 μs (typical) |
| Junction Capacitance | 3000 pF (typical) |
Spectral Response Characteristics
Related Videos
Get in Touch
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu