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S1336-44BQ Silicon PIN Photodiode 190-1100 nm Range 0.5A/W Sensitivity Low 150pF Capacitance for UV to NIR Precision Photometry

Price Negotiable
Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days
Brand: Hamamatsu
Product Description
Product Overview

The S1336-44BQ Silicon PIN Photodiode delivers exceptional performance for precision photometry applications across ultraviolet to near-infrared wavelengths. Engineered with low capacitance and high reliability, this component is ideal for demanding measurement systems.

Key Features
  • High sensitivity in ultraviolet band (190-400 nm)
  • Low capacitance design for fast response
  • High reliability for industrial applications
  • Broad spectral range from UV to NIR (190-1100 nm)
Technical Specifications
Parameter Value
Spectral Response Range 190 to 1100 nm
Peak Sensitivity Wavelength 960 nm (typical)
Sensitivity 0.5 A/W (typical)
Dark Current (Maximum) 50 pA
Rise Time 0.5 μs (typical)
Junction Capacitance 150 pF (typical)
Spectral Response Characteristics

The following charts illustrate the spectral response performance across the operating wavelength range:

S1336-44BQ Silicon Photodiode spectral response curve showing sensitivity across 190-1100 nm range Detailed spectral response characteristics of S1336-44BQ photodiode with peak at 960 nm

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company ShenzhenYijiajie Electronic Co., Ltd.
Location Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person Xu

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