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S12053-02 Silicon Avalanche Photodiode Short Wavelength Type 600nm Band with 150V Breakdown Voltage and 900MHz Cutoff

Price Negotiable
Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days
Brand: Hamamatsu
Product Description
Product Overview

The S12053-02 Silicon Avalanche Photodiode is a short wavelength type specifically optimized for the 600nm band, delivering exceptional performance in ultraviolet to visible light detection applications.

Key Features
  • Short wave type APD with high sensitivity and low noise characteristics
  • Optimized performance in ultraviolet to visible band (600nm wavelength)
  • Temperature coefficient of breakdown voltage: 0.14 V/℃ (typical)
  • Gain: 50 (typical value)
  • Test conditions: TA = 25℃, Photosensitivity at λ=620 nm, M=1
Technical Specifications
Parameter Value
Sensitivity (typical) 0.42 A/W
Dark current (maximum) 5 nA
Cutoff frequency (typical) 900 MHz
Junction capacitance (typical) 2 pF
Breakdown voltage (typical) 150V
Product Images
S12053-02 Silicon Avalanche Photodiode technical diagram and specifications S12053-02 Silicon Avalanche Photodiode product photo showing component details

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Company ShenzhenYijiajie Electronic Co., Ltd.
Location Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person Xu

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