GS-AB-S GaN UV Photodiode Sensor 355nm Peak Wavelength 0.20A/W Responsivity TO-46 Package

Price Negotiable

Price: Negotiable

MOQ: 5

Delivery Time: 3-5work days

Brand: YJJ

Product Description

GS-AB-S GaN-Based UV Photodiode Sensor

Professional-grade GaN-based ultraviolet photodiode sensor operating in photovoltaic mode, designed for precise UV radiation detection across UVA, UVB, and UVC spectrums.

Key Features

Broadband detection covering UVA, UVB, and UVC spectrums
Photovoltaic mode operation for efficient performance
TO-46 metal housing for durability and thermal stability
Excellent visible blindness with rejection ratio >10⁴
High responsivity of 0.20 A/W at 355 nm peak wavelength
Ultra-low dark current
Fast response with 3μs rise time

Applications

UV index monitoring systems
UV radiation dose measurement
Flame detection and fire safety systems

Technical Specifications

Maximum Ratings

Parameter	Symbol	Value	Unit
Operation temperature range	Topt	-25 to 85	°C
Storage temperature range	Tsto	-40 to 85	°C
Soldering temperature (3 s)	Tsol	260	°C
Reverse voltage	Vr-max	-10	V

General Characteristics (25°C)

Parameter	Symbol	Value	Unit
Chip size	A	1	mm²
Dark current (Vr = -1 V)	Id	<1	nA
Temperature coefficient (@265 nm)	Tc	0.05	%/°C
Capacitance (at 0 V and 1 MHz)	Cp	18	pF

Spectral Response Characteristics (25°C)

Parameter	Symbol	Value	Unit
Wavelength of peak responsivity	λp	355	nm
Peak responsivity (at 355 nm)	Rmax	0.20	A/W
Spectral response range (R=0.1×Rmax)	-	210-370	nm
UV-visible rejection ratio (Rmax/R400 nm)	-	>10⁴	-