GT-UVV-LW InGaN UV Photodiode 390nm Peak Wavelength with 0.289A/W Responsivity in Photovoltaic Mode
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Brand:
UV
Product Description
GT-UVV-LW InGaN UV Photodiode - Photovoltaic Mode Operation
Product Overview
The GT-UVV-LW is a high-performance InGaN-based UV photodiode operating in photovoltaic mode, designed for precision ultraviolet light detection applications.
Key Features
- Indium Gallium Nitride (InGaN) based material for superior UV response
- Photovoltaic mode operation for efficient energy conversion
- TO-46 metal housing for robust protection and thermal management
- High responsivity of 0.289A/W at peak wavelength
- Ultra-low dark current (
Applications
- UV LED monitoring and characterization
- UV radiation dose measurement systems
- UV curing process control and monitoring
Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Wavelength | 390 | nm |
| Light Sensitivity | 0.289 | A/W |
| Spectral Response Range (R=0.1×Rmax) | 290-440 | nm |
| UV-Visible Rejection Ratio (Rmax/R400 nm) | >10 | - |
| Chip Size | 1 | mm² |
Operating Conditions
Operating Temperature: -25°C to 85°C
Storage Temperature: -40°C to 85°C
Soldering Temperature (3s): 260°C
Maximum Reverse Voltage: -10V
Capacitance (0V, 1MHz): 60pF
Temperature Coefficient: 0.05%/°C
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu