S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Brand:
Hamamatsu
Product Description
Product Description:
S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry
Features:
Suitable for precise photometric determination from ultraviolet to near infrared
features
● High sensitivity in ultraviolet band
Low low capacitance
● High reliability
Rise time (typical value). 0.2 u s
Junction capacitance (typical value) 65 pF
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 5V |
| spectral response range is | 190 to 1100 nm |
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.5 A/W |
| Dark current (maximum) | 30 pA |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu