S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Brand:
Hamamatsu
Product Description
Product Description:
S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current
Features:
Suitable for visible light to near infrared band, universal photometric determination
Product features
● High sensitivity in visible to near infrared band
● Low dark current
● High reliability
● High linearity
Rise time (typical value). 10 mu s
Junction capacitance (typical value) 4300 pF
Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| spectral response range is | 320 to 1100 nm |
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.6 A/W |
| Dark current (Max.) | 50 pA |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu