S2386-5K Silicon Photodiode Sensor 30V Infrared Photoelectric Detector 320-1100nm Range 960nm Peak
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Brand:
Hamamatsu
Product Description
S2386-5K Silicon Photodiode Sensor - A high-performance infrared photoelectric sensor designed for universal photometry applications with 30V operating voltage and exceptional sensitivity across visible to near-infrared spectrum.
Key Features & Performance
- High sensitivity across visible to near-infrared band (320-1100 nm)
- Ultra-low dark current of 5 pA maximum
- Exceptional reliability and high linearity performance
- Fast response with 1.8 μs rise time
- Peak sensitivity at 960 nm wavelength
Technical Specifications
| Parameter | Value |
|---|---|
| Maximum Reverse Voltage | 30 V |
| Spectral Response Range | 320 to 1100 nm |
| Peak Sensitivity Wavelength | 960 nm |
| Sensitivity (Typical) | 0.6 A/W |
| Maximum Dark Current | 5 pA |
| Rise Time (Typical) | 1.8 μs |
| Junction Capacitance (Typical) | 730 pF |
Measurement Conditions
All specifications measured at typical ambient temperature of 25°C. Photosensitivity measured at λ=960 nm, dark current at VR=10 mV, and terminal capacitance at VR=0 V, f=10 kHz.
Product Images
Application Areas
Ideal for industrial photometry, optical measurement systems, light detection applications, and general-purpose sensing where reliable performance across visible to near-infrared spectrum is required.
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu