SIC Integrated Circuit Chip SCT011H75G3AG Power MOSFET Transistors 750V H2PAK-7
SIC Integrated Circuit Chip SCT011H75G3AG Power MOSFET Transistors 750V H2PAK-7
Product Description Of SCT011H75G3AG
SCT011H75G3AG is silicon carbide Power MOSFET device, 11.4 mOhm typ. Operating junction temperature rang is -55°C to 175°C, Very low RDS(on) over the entire temperature range.
Specification Of SCT011H75G3AG
| Part Number: | SCT011H75G3AG | Package: | H²PAK-7 |
|---|---|---|---|
| Gate-Source Voltage: | -10V To 22V | Thermal Resistance, Junction-To-Ambient: | 50 °C/W |
| RDS(On) Typ.: | 11.4 MΩ | Drain-Source Breakdown Voltage(VGS = 0 V, ID = 1 MA) Min: | 750V |
H²PAK-7 Recommended Footprint(SCT011H75G3AG)
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