1200V SiC Trench MOSFET IMBG120R045M1H N-Channel MOSFET Transistors TO-263-8

1200V SiC Trench MOSFET IMBG120R045M1H N-Channel MOSFET Transistors TO-263-8​

Product Description Of IMBG120R045M1H

IMBG120R045M1H is CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology.

Specification Of IMBG120R045M1H

Features Of​ IMBG120R045M1H

• Short circuit withstand time 3 µs
• Fully controllable dV/dt
• Benchmark gate threshold voltage, VGS(th) = 4.5V
• Robust against parasitic turn on, 0V turn-off gate voltage can be applied
• Robust body diode for hard commutation

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.