N-Channel IPD35N10S3L26ATMA1 100V Automotive Grade MOSFETs Transistors TO-252-3​

Product Description Of IPD35N10S3L26ATMA1

IPD35N10S3L26ATMA1 is OptiMOS®-T Power-Transistor, Optimized total gate charge for smaller driver output stage.

Specification Of IPD35N10S3L26ATMA1

Features Of IPD35N10S3L26ATMA1

• N-Channel - Enhanced Mode
• 100% avalanche tested
• 175°C operating temperature
• Maximum current up to 180A
• MSL1 peak return temperature up to 260°C
• Low switching power and conduction power losses for high thermal efficiency

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.