IPD075N03LG is an N-channel MOSFET transistor. The following are the applications, conclusions, and parameters of this transistor:
Application:
Power switch and DC-DC converter
Motor driver
Automotive electronic equipment
Industrial automation control system
Conclusion:
Efficient N-channel MOSFET transistor
Low conduction resistance and leakage current
High temperature working ability
Low reverse leakage current
Parameters:
VDS (maximum drain source voltage): 30 V
ID (maximum drain current): 75 A
RDS (on): 5.5 m Ω
Qg (total gate charge): 180 nC
VGS (maximum gate source voltage): ± 20 V
Ciss (input capacitance): 3550 pF
Coss (output capacitance): 1120 pF
Crss (feedback capacitance): 180 pF
Tj (junction temperature): -55 to 175 ° C
Package: TO-252-3