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CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP

Price Negotiable
Price: Contact us
MOQ: Contact us
Delivery Time: The goods will be shipped within 3 days once received fund
Brand: Ti
Product Description

CSD17578Q3A Mosfet Power Transistor MOSFET CSD17578Q3A 30 V 8-VSONP

 

1 Features

  • Low Qg and Qgd
  • Low RDS(on)

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb-Free

  • RoHS Compliant

  • Halogen Free

  • SON 3.3 mm × 3.3 mm Plastic Package

 

2 Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems

  • Optimized for Control FET Applications

 

3 Description

This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

 

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 7.9 nC
Qgd Gate Charge Gate to Drain 1.7 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 8.2
VGS =10V 6.3
VGS(th) Threshold Voltage 1.5 V


Ordering Information

DEVICE

MEDIA

QTY

PACKAGE

SHIP

CSD17578Q3A

13-Inch Reel

2500

SON 3.3 x 3.3 mm Plastic Package

Tape and Reel

CSD17578Q3AT

7-Inch Reel

250

 

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

30

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

20

A

Continuous Drain Current (Silicon limited), TC = 25°C

54

Continuous Drain Current(1)

14

IDM

Pulsed Drain Current(2)

142

A

PD

Power Dissipation(1)

2.5

W

Power Dissipation, TC = 25°C

37

TJ, Tstg

Operating Junction Temperature, Storage Temperature

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID =22A,L=0.1mH,RG =25Ω

24

mJ

Get in Touch

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Company ChongMing Group (HK) Int'l Co., Ltd
Location Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person Doris Guo

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