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STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package

Price Negotiable
Price: Contact us
MOQ: Contact us
Delivery Time: The goods will be shipped within 3 days once received fund
Brand: ST
Product Description

STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package

 

Features

Order code

VDS

RDS(on)max

ID

PTOT

STP110N8F6

80 V

0.0065 Ω

110 A

200 W

  • Very low on-resistance

  • Very low gate charge

  • High avalanche ruggedness

  • Low gate drive power loss

     

Applications

• Switching applications

 

Description

This device is an N-channel Power MOSFET developed using the STripFETTM F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

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Company ChongMing Group (HK) Int'l Co., Ltd
Location Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person Doris Guo

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