STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package
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MOQ:
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Delivery Time:
The goods will be shipped within 3 days once received fund
Brand:
ST
Product Description
STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package
Features
|
Order code |
VDS |
RDS(on)max |
ID |
PTOT |
|
STP110N8F6 |
80 V |
0.0065 Ω |
110 A |
200 W |
-
Very low on-resistance
-
Very low gate charge
-
High avalanche ruggedness
-
Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFETTM F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo