CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET
CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET
1 Features
- Optimized for 5-V Gate Drive
-
Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Pb-Free
-
RoHS Compliant
-
Halogen-Free
-
SON 2-mm × 2-mm Plastic Package
2 Applications
-
DC-DC Converters
-
Battery and Load Management Applications
3 Description
This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
Product Summary
(1) For all available packages, see the orderable addendum at the end of the data sheet.
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain-to-Source Voltage |
30 |
V |
|
|
Qg |
Gate Charge Total (4.5 V) |
2.1 |
nC |
|
|
Qgd |
Gate Charge Gate-to-Drain |
0.4 |
nC |
|
|
RDS(on) |
Drain-to-Source On Resistance |
VGS = 3 V |
31 |
mΩ |
|
VGS = 4.5 V |
26 |
mΩ |
||
|
VGS = 8 V |
24 |
mΩ |
||
|
VGS(th) |
Threshold Voltage |
1.3 |
V |
|
Ordering Information
|
PART NUMBER |
QTY |
MEDIA |
PACKAGE |
SHIP |
|
CSD17313Q2 |
3000 |
13-Inch Reel |
SON 2-mm × 2-mm Plastic Package |
Tape and Reel |
|
CSD17313Q2T |
250 |
7-Inch Reel |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-Source Voltage |
30 |
V |
|
VGS |
Gate-to-Source Voltage |
+10 / –8 |
V |
|
ID |
Continuous Drain Current (package limited) |
5 |
A |
|
Continuous Drain Current (silicon limited), TC = 25°C |
19 |
||
|
Continuous Drain Current(1) |
7.3 |
||
|
IDM |
Pulsed Drain Current, TA = 25°C(2) |
57 |
A |
|
PD |
Power Dissipation(1) |
2.4 |
W |
|
Power Dissipation, TC = 25°C |
17 |
||
|
TJ, TSTG |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
|
EAS |
Avalanche Energy, Single Pulse, ID =19A,L=0.1mH,RG =25Ω |
18 |
mJ |
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