NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

►-1.1 A, -30 V, RDS(ON) = 0.3 W @ VGS=-4.5 V

                      RDS(ON) = 0.2 W @ VGS=-10 V.

►Industry standard outline SOT-23 surface mount package

using proprietary SuperSOTTM-3 design for superior thermal

and electrical capabilities.

►High density cell design for extremely low RDS(ON).

►Exceptional on-resistance and maximum DC current capability.

Absolute Maximum Ratings TA = 25°C unless otherwise noted