BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor
BFG135
NPN 7GHz wideband transistor
DESCRIPTION
NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.
The distribution of the active areas across the surface of the device gives an excellent temperature profile.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 25 | V |
| VCEO | collector-emitter voltage | open base | - | 15 | V |
| VEBO | emitter-base voltage | open collector | - | 2 | V |
| IC | DC collector current | - | 150 | mA | |
| Ptot | total power dissipation | up to Ts = 145 °C (note 1) | - | 1 | W |
| Tstg | storage temperature | -65 | 155 | °C | |
| Tj | junction temperature | - | 175 | °C |
Note 1. Ts is the temperature at the soldering point of the collector tab.
PINNING
| PIN | DESCRIPTION |
| 1 | emitter |
| 2 | base |
| 3 | emitter |
| 4 | collector |
Intermodulation distortion and second order intermodulation distortion test circuit.
Stock Offer (Hot Sell)
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