2SC2229-Y power mosfet ic Power Mosfet Transistor Silicon NPN Triple Diffused Type (PCT Process)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

2SC2229

Black and White TV Video Output Applications

High-Voltage Switching Applications

Driver Stage Audio Amplifier Applications

• High breakdown voltage: VCEO = 150 V (min)

• Low output capacitance: Cob = 5.0 pF (max)

• High transition frequency: fT = 120 MHz (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

  Weight: 0.36 g (typ.)

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