NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor
NDT456P P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
- -7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V
- RDS(ON) = 0.045 W @ VGS = -4.5 V.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
| Symbol | Parameter | NDT456P | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID |
Drain Current - Continuous (Note 1a) - Pulsed |
±7.5 | A |
| ±20 | A | ||
| PD |
Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
3 | W |
| 1.3 | W | ||
| 1.1 | W | ||
| TJ ,TSTG | Operating and Storage Temperature Range | -65 to 150 | °C |
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