FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET
FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
· 7.5 A, 30 V. RDS(ON) = 18 mW @ VGS = 10 V
RDS(ON) = 23 mW @ VGS = 4.5 V
· Fast switching speed
· Low gate charge
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
Absolute Maximum Ratings TA=25℃ unless otherwise noted
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ± 20 | V |
| ID |
Drain Current – Continuous (Note 1a) – Pulsed |
7.5 | A |
| 20 | |||
| PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | W |
| 1.0 | |||
| 0.9 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | –55 to +150 | ℃ |
Stock Offer (Hot Sell)
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