P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET
STP3NK90Z - STP3NK90ZFP
STD3NK90Z - STD3NK90Z-1
N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
• TYPICAL RDS(on) = 4.1 Ω
• EXTREMELY HIGH dv/dt CAPABILITY
• 100% AVALANCHE TESTED
• GATE CHARGE MINIMIZED
• VERY LOW INTRINSIC CAPACITANCES
• VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
• HIGH CURRENT, HIGH SPEED SWITCHING
• IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
• LIGHTING
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit | ||
| STP3NK90Z | STP3NK90ZFP |
STD3NK90Z STD3NK90Z-1 |
|||
| VDS | Drain-source Voltage (VGS = 0) | 900 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 900 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 3 | 3 (*) | 3 | A |
| ID | Drain Current (continuous) at TC = 100°C | 1.89 | 1.89 (*) | 1.89 | A |
| IDM (•) | Drain Current (pulsed) | 12 | 12 (*) | 12 | A |
| PTOT | Total Dissipation at TC = 25°C | 90 | 25 | 90 | W |
| Derating Factor | 0.72 | 0.2 | 0.72 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 4000 | V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 | °C | ||
(•) Pulse width limited by safe operating area
(1) ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Stock Offer (Hot Sell)
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