BUK9508-55A Power Mosfet Transistor TrenchMOS logic level FET
Price:
Negotiate
MOQ:
50pcs
Delivery Time:
1 day
Product Description
BUK95/9608-55A
TrenchMOS™ logic level FET
Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9508-55A in SOT78 (TO-220AB)
BUK9608-55A in SOT404 (D2-PAK).
Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Logic level compatible.
Applications
■ Automotive and general purpose power switching:
♦ 12 V and 24 V loads
♦ Motors, lamps and solenoids.
Quick reference data
| Symbol | Parameter | Conditions | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS | drain-source voltage (DC) | - | 55 | V | |
| ID | drain current (DC) | Tmb = 25 °C; VGS = 5 V | - | 125 | A |
| Ptot | total power dissipation | Tmb = 25 °C | - | 253 | W |
| Tj | - | 175 | °C | ||
| RDSon | drain-source on-state resistance | Tj = 25 °C; VGS = 5 V; ID = 25 A | 6.8 | 8 | mΩ |
| Tj = 25 °C; VGS = 4.5 V; ID = 25 A | - | 8.5 | mΩ | ||
| Tj = 25 °C; VGS = 10 V; ID = 25 A | 6.4 | 7.5 | mΩ |
Simplified outline Symbol
Stock Offer (Hot Sell)
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Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo