IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic
IRFP9240, SiHFP9240
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
PRODUCT SUMMARY
| VDS (V) | - 200 V | |
| RDS(on) (Max.) (Ω) | VGS = - 10 V | 0.50 |
| Qg (Max.) (nC) | 44 | |
| Qgs (nC) | 7.1 | |
| Qgd (nC) | 27 | |
| Configuration | Single | |
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - 200 | V | ||
| Gate-Source Voltage | VGS | ± 20 | V | ||
| Continuous Drain Current | VGS at - 10 V | TC = 25 °C | ID | - 12 | A |
| TC = 100 °C | - 7.5 | ||||
| Pulsed Drain Current a | IDM | -48 | A | ||
| Linear Derating Factor | 1.2 | W/°C | |||
| Single Pulse Avalanche Energy b | EAS | 790 | mJ | ||
| Repetitive Avalanche Current a | IAR | - 12 | A | ||
| Repetitive Avalanche Energy a | EAR | 15 | mJ | ||
| Maximum Power Dissipation | TC = 25 °C | PD | 150 | W | |
| Peak Diode Recovery dV/dt c | dV/dt | - 5.0 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 150 | °C | ||
| Soldering Recommendations (Peak Temperature) | for 10 s | 300 d | °C | ||
| Mounting Torque | 6-32 or M3 screw | 10 | lbf·in | ||
| 1.1 | N·m | ||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 8.2 mH, RG = 25 Ω, IAS = - 12 A (see fig. 12).
c. ISD ≤ - 12 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
Stock Offer (Hot Sell)
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