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STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET

Price Negotiable
Price: Negotiate
MOQ: 20pcs
Delivery Time: 1 day
Product Description

 

STD65NF06

STP65NF06

N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET

 

General features

Type VDSS RDS(on) ID
STD65NF06 60V <14mΩ 60A
STP65NF06 60V <14mΩ 60A

 

■ Standard level gate drive

■ 100% avalanche tested

 

Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

 

Applications

■ Switching application

 

  

 

Absolute maximum ratings

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 60 V
VGS Gate- source voltage ± 20 V
ID Drain current (continuous) at TC = 25°C 60 A
ID Drain current (continuous) at TC = 100°C 42 A
IDM(1) Drain current (pulsed) 240 A
Ptot Total dissipation at TC = 25°C 110 W
  Derating Factor 0.73 W/°C
dv/dt (2) Peak diode recovery voltage slope 10 V/ns
EAS (3) Single pulse avalanche energy 390 mJ
Tstg Storage temperature -55 to 175 °C
Tj Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

3. Starting Tj = 25 °C, ID = 30A, VDD = 40V

 

 

 

 

Stock Offer (Hot Sell)

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L4947PD 1200 ST 14+ SOP20

 

 

 

 

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Company ChongMing Group (HK) Int'l Co., Ltd
Location Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person Doris Guo

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