PNP Silicon Amplifier Transistor 625mW BC557A
Price:
negotiation
MOQ:
10pcs
Delivery Time:
1 day
Product Description
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• 150o C Junction Temperature
• Through Hole Package
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking:Type Number
Mechanical Data
• Case: TO-92, Molded Plastic
• Polarity: indicated as below.
Maximum Ratings @ 25o C Unless Otherwise Specified
| Charateristic | Symbol | Value | Unit |
|
Collector-Emitter Voltage BC556 BC557 BC558 |
VCEO |
-65 -45 -30 |
V |
|
Collector-Base Voltage BC556 BC557 BC558 |
VCBO |
-80 -50 -30 |
V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current(DC) | IC | -100 | mA |
| Power Dissipation@TA=25°C | Pd |
625 5.0 |
mW mW/°C |
| Power Dissipation@TC=25°C | Pd |
1.5 12 |
mW mW/°C |
| Thermal Resistance, Junction to Ambient Air | R JA | 200 | °C/W |
| Thermal Resistance, Junction to Case | R JC | 83.3 | °C/W |
| Operating & Storage Temperature | Tj , TSTG | -55~150 | °C |
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Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo